参数资料
型号: BAP65-02,115
厂商: NXP Semiconductors
文件页数: 4/9页
文件大小: 98K
描述: DIODE PIN 30V 100MA SOD-523
产品培训模块: RF Small Signal Products Part 1
RF Small Signal Products Part 2
产品目录绘图: SOD-523 Pin Out
SOD-523 Circuit
标准包装: 3,000
二极管类型: PIN - 单
电压 - 峰值反向(最大): 30V
电流 - 最大: 100mA
电容@ Vr, F: 0.375pF @ 20V,1MHz
电阻@ Vr, F: 3.5 欧姆 @ 100mA,100MHz
功率耗散(最大): 715mW
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 带卷 (TR)
BAP65-02
All information provided in this document is subject to legal disclaimers.
? NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
4 of 9
NXP Semiconductors
BAP65-02
Silicon PIN diode
f = 100 MHz; Tj
=25?Cf=1MHz;
T
j
=25?C
Fig 1. Forward resistance as a function of forward
current; typical values
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
(1) IF
=0.5mA
(2) IF
=1mA
(3) IF
=5mA
(4) IF
=10mA
(5) IF
= 100 mA
Diode inserted in series with a 50
?
stripline circuit and
biased via the analyzer Tee network. Tamb
=25?C.
Diode zero biased and inserted in series with a 50
?
stripline circuit. Tamb
=25?C.
Fig 3. Insertion loss (?s21?2) of the diode as a function
of frequency; typical values
Fig 4. Isolation (?s21?2) of the diode as a function of
frequency; typical values
10
1
10?110?1
mld499
1
10 102I
F
(mA)
rD
(Ω)
0
024
81216
0
VR
(V)
1000
200
400
600
800
Cd
(fF)
mld500
0.5
0
1000
(1) (2) (3) (4)
(5)
2000
f (MHz)
3000
0
?
?0.1
?0.2
?0.3
?0.4
mld501
s21
2
(dB)
40
0
1000
2000
f (MHz)
3000
0
?10
?30
?
?20
mld502
s21
2
(dB)
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