参数资料
型号: BAS16
厂商: Fairchild Semiconductor
文件页数: 1/4页
文件大小: 47K
描述: DIODE ULTRAFAST HI COND SOT-23
产品变化通告: Mold Compound Change 12/Dec/2007
其它图纸: Diode Circuit
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 85V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 6ns
电流 - 在 Vr 时反向漏电: 1µA @ 75V
电容@ Vr, F: 2pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1611 (CN2011-ZH PDF)
其它名称: BAS16FSDKR
BAS16
?2001 Fairchild Semiconductor Corporation
BAS16, Rev. C
BAS16
Small Signal Diode
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3
1
2
SOT-23
1
2
3
A6
Connection Diagram
3
1
2NC
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 85 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature -55 to +150
°C
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 μA
85
V
VF
Forward Voltage I
F = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
715
855
1.0
1.25
mV
mV
V
V
IR
Reverse Current
VR = 75 V
1.0
μA
VR = 25 V, TA = 150°C
30
μA
50
μA
VR = 75 V, TA = 150°C
CT
Total Capacitance
VR = 0,
f
= 1.0 MHz
2.0
pF
trr
Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
6.0 ns
RL = 100 ?
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