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参数资料
| 型号： | BAS16DXV6T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 97K |
| 描述： | DIODE SWITCH DUAL 75V SOT563 |
| 产品变化通告： | Product Discontinuation 02/Jan/2007 |
| 标准包装： | 8,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 电流 - 在 Vr 时反向漏电： | 1µA @ 75V |
| 电流 - 平均整流 (Io)（每个二极管）： | 200mA（DC） |
| 电压 - (Vr)（最大）： | 75V |
| 反向恢复时间(trr)： | 6ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 个独立式 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
| 其它名称： | BAS16DXV6T5GOS |
?
Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 4
1
Publication Order Number:
BAS16DXV6/D
BAS16DXV6T1,
BAS16DXV6T5,
SBAS16DXV6T1G
Dual Switching Diode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
Pb?Free Packages are Available
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IF
200
mA
Peak Forward Surge Current
Pulse Width = 10 s
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation TA
= 25
°C
Derate above 25°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient
RJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation TA
= 25
°C
Derate above 25°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient
RJA
250
(Note 1)
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?4 @ Minimum Pad
http://onsemi.com
6
1
SOT?563
CASE 463A
PLASTIC
3
1
2
4
6
5
A6 = Specific Device Code
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
A6 M
Device Package Shipping?
ORDERING INFORMATION
BAS16DXV6T1 SOT?563 4000 / Tape &
Reel
BAS16DXV6T1G SOT?563
(Pb?Free)
4000 / Tape &
Reel
3
4
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BAS16DXV6T5 SOT?563 8000 / Tape &
Reel
BAS16DXV6T5G SOT?563
(Pb?Free)
8000 / Tape &
Reel
SBAS16DXV6T1G SOT?563
(Pb?Free)
8000 / Tape &
Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS16-E3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Siliconix 功能描述:BAS16-E3-08 - Cut TR (SOS) 制造商:Vishay Semiconductors 功能描述:DIODE SWITCHING 75V 0.15A SOT23 制造商:Vishay Intertechnologies 功能描述:BAS16 Series 75 V 150 mA 350 mW Small Signal Fast Switching Diode - SOT-23 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
| BAS16-E3-18 | 制造商:Vishay Siliconix 功能描述:BAS16-E3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
| BAS16E6327 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Infineon Technologies 功能描述:Diode Switching 85V 0.25A 3-Pin SOT-23 T/R |
| BAS16E6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 85V 0.25A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF DIODES - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE SWITCH 80V 0.25A SOT23-3 |
| BAS16E6327T | 制造商:Infineon Technologies AG 功能描述:Diode Switching 85V 0.25A 3-Pin SOT-23 T/R |
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