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参数资料
| 型号： | BAS19201 |
| 英文描述： | CY62148E MoBL® 4-Mbit (512K x 8) Static RAM |
| 文件页数： | 1/2页 |
| 文件大小： | 35K |
| 代理商： | BAS19201 |
SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 JANUARY 1995
PIN CONFIGURATION
PARTMARKING DETAILS
BAS19 A8
BAS20 A81
BAS21 A82
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BAS19
BAS20
BAS21
UNIT
Continuous Reverse Voltage
V
R
V
RRM
I
F(AV)
I
F
I
FRM
P
tot
T
j
:T
stg
100
150
200
V
Repetative Peak Reverse Voltage
120
200
250
V
Average Forward Rectified Current
200
mA
Forward Current
200
mA
Repetative Peak Forward Current
625
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Reverse
Breakdown
Voltage
V
(BR)
BAS19
120
V
I
R
=100
μ
A (1)
BAS20
200
V
I
R
=100
μ
A (1)
BAS21
250
V
I
R
=100
μ
A (2)
Reverse Current
I
R
100
100
nA
μ
A
V
R
=V
R
max
V
R
=V
R
max, T
J
=150°C
Static Forward Voltage V
F
1.00
1.25
IF=100mA
I
F
=200mA
Differential Resistance
r
diff
5
I
F
=10mA
Diode Capacitance
C
d
5
pF
f=1MHz
Reverse Recovery Time t
rr
50
ns
I
F
=30mA to I
R
=30mA
R
L
=10
measured at I
R
=3mA
(1) Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
BAS19
BAS20
BAS21
PAGE NO
1
3
2
SOT23
1
3
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PDF描述 |
|---|---|
| BAS19W-21W | Switching diodes |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS19215 | 制造商:NXP Semiconductors 功能描述:SWITCHING DIODE 120V SOT-23 制造商:NXP Semiconductors 功能描述:DIODE GEN-PURP 120V 0.2A SOT-23 |
| BAS19-7 | 功能描述:二极管 - 通用，功率，开关 350MW 120V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS19-7-F | 功能描述:二极管 - 通用，功率，开关 350MW 120V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS19-AU | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SWITCHING DIODES Fast switching speed |
| BAS19-E3-08 | 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:BAS19-E3-08 - Bulk 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23 |
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