参数资料
型号: BAS21-7
厂商: DIODES INC
元件分类: 参考电压二极管
英文描述: SURFACE MOUNT FAST SWITCHING DIODE
中文描述: 0.2 A, 250 V, SILICON, SIGNAL DIODE
封装: PLASTIC PACKAGE-3
文件页数: 1/3页
文件大小: 49K
代理商: BAS21-7
B
BAS21
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
250
200
600
700
V
mA
mA
mA
1.0
2.0
A
A
°
C
°
C
T
stg
T
J
-55 to +150
150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Characteristic
Max
Units
BAS21
350
2.8
357
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
1998 Fairchild Semiconductor Corporation
SOT-23
3
1
2
29
3
1
2
2 NC
3
1
CONNECTION DIAGRAM
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