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| 型号： | BAS70JW-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 122K |
| 描述： | DIODE SCHOTTKY 200MW 70V SOT-363 |
| 产品目录绘图： | SOT-363 Circuit |
| 标准包装： | 1 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 15mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 50V |
| 电流 - 平均整流 (Io)（每个二极管）： | 70mA（DC） |
| 电压 - (Vr)（最大）： | 70V |
| 反向恢复时间(trr)： | 5ns |
| 二极管类型： | 肖特基 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 个独立式 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1598 (CN2011-ZH PDF) |
| 其它名称： | BAS70JW-FDIDKR |
BAS70JW
Document number: DS30188 Rev. 13 - 2
1 of 3
www.diodes.com
June 2008
? Diodes Incorporated
BAS70JW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Features
?
Low Forward Voltage Drop
?
Fast Switching
?
Ultra-Small Surface Mount Package
?
PN Junction Guard Ring for Transient and ESD Protection
?
Lead Free/RoHS Compliant (Note 3)
?
"Green" Device (Note 4 and 5)
Mechanical Data
?
Case: SOT-363
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Solderable per MIL-STD-202, Method 208
?
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please see Ordering Information, Note 7, on Page 2
?
Orientation: See Diagram
?
Marking Information: See Page 2
?
Ordering Information: See Page 2
?
Weight: 0.006 grams (approximate)
C1
A2
A
1
C2
Top View
Device Schematic
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
V
RMS Reverse Voltage
VR(RMS)
49
V
Forward Continuous Current (Note 1)
IFM
70
mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
IFSM
100
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
PD
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RθJA
625
°C/W
Operating Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TSTG
-65 to +125
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
70
?
V
IR
= 10
μA
Forward Voltage
VF
?
410
1000
mV
mV
tp
<300μs, IF
= 1.0mA
tp
<300μs, IF
= 15mA
Reverse Current (Note 2)
IR
?
100
nA
tp
< 300μs, VR
= 50V
Total Capacitance
CT
?
2.0
pF
VR
= 0V, f = 1.0MHz
Reverse Recovery Time
trr
?
5.0
ns
IF
=
I
R
=
10mA to
I
R
=
1.0mA,
Irr
= 0.1 x
I
R, RL
= 100
Ω
Notes: 1. Device mounted on FR-4 PC
board with recommended pad layout, which can
be found on our website at
http://www.di
odes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" polic
y can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with
Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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