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| 型号： | BAS70LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 126K |
| 描述： | DIODE SCHOTTKY 70V SOT23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 70V |
| 电流 - 平均整流 (Io)： | 70mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 15mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 70V |
| 电容@ Vr, F： | 2pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | BAS70LT1GOSDKR |
             ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 8 1 Publication Order Number: BAS70LT1/D BAS70LT1G, NSVBAS70LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Low Forward Voltage ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 150 ?C unless otherwise noted) Rating Symbol Value Unit Forward Current IF 70 mA Non?Repetitive Peak Forward Surge Current (t ? 1.0 s) IFSM 100 mA Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25 ?C Derate above 25?C PF 225 1.8 mW mW/?C Operating Junction and Storage Temperature Range TJ, Tstg ?55 to +150 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT?23 (TO?236) CASE 318 STYLE 8 http://onsemi.com BE Specific Device Code M = Date Code* = Pb?Free Package MARKING DIAGRAM Device Package Shipping? ORDERING INFORMATION BAS70LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3 CATHODE 1 ANODE 70 VOLTS SCHOTTKY BARRIER DIODES 1 BE M (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. NSVBAS70LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS70LT1G | 制造商:ON Semiconductor 功能描述:Schottky Diode |
| BAS70LT1G_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage |
| BAS70PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SCHOTTKY DIODE VOLTAGE 70 Volts CURRENT 70 mAmperes |
| BAS70Q-7-F | 功能描述:SCHOTTKY DIODE SOT23 制造商:diodes incorporated 系列:汽车级，AEC-Q101 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:70V 电流 - 平均整流（Io）:70mA（DC） 不同 If 时的电压 - 正向（Vf:1V @ 15mA 速度:小信号 =< 200mA（Io），任意速度 不同?Vr 时的电流 - 反向漏电流:100nA @ 50V 不同?Vr，F 时的电容:2pF @ 0V，1MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23-3 工作温度 - 结:-55°C ~ 125°C 标准包装:1 |
| BAS70S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SOT-23 SCHOTTKY DIODE |
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