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参数资料
| 型号： | BASTSERIES |
| 英文描述： | 5V, 3.3V, ISR™ High-Performance CPLDs |
| 中文描述： | 稳压器大规模集成电路 |
| 文件页数： | 9/11页 |
| 文件大小： | 127K |
| 代理商： | BASTSERIES |
BA
ΟΟ
ST / BA
ΟΟ
SFP series
Regulator ICs
(9) When the connected load which contains a big inductance component in an output terminal is connected and the
occurrence of a reverse electromotive force can be considered at the time of and power-output OFF at the time of starting,
I ask the insertion of protection diode of you.
(Example)
Output
pin
9/11
(10) Although it is sure that the example of an application circuit should be recommended, in a usage, I fully ask the
validation of a property of you.
In addition, when you alter the circuit constant with outside and you become a usage, please see and decide sufficient
margin in consideration of the dispersion in an external component and IC of our company etc. not only including the static
characteristic but including a transient characteristic.
This IC is monolithic IC and has P+ isolation and P substrate for an isolation between each element.
A P-N junction is formed by these P layers and N layers of each element, and various kinds of parasitic elements are
formed. For example, when the resistor and the transistor are connected with the pin like the example of a simple
architecture,
At a resistor, it is at the time of GND
>
(PIN A), at a transistor (NPN), it is at the time of GND
>
(PIN B),
A P-N junction operates as parasitism diode.
At a transistor (NPN), it is at the time of GND
>
(PIN B),
The NPN transistor of a parasitic element operates by N layers of other elements which approach with the
above-mentioned parasitism diode.
A parasitic element is inevitably made according to a potential relation on the architecture of IC.
When a parasitic element operates, the interference of a circuit operation is caused and the cause of a malfunction, as a
result a destructive is obtained.
Therefore, please be fully careful of impressing a voltage lower than GND(P substrate) to an input/output terminal etc. not
to carry out usage with which a parasitic element operates.
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PDF描述 |
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| BAT160SERIES | CY8C24123A CY8C24223A, CY8C24423A PSoC® Mixed-Signal Array |
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| BAT46ACJW | SMALL SIGNAL SCHOTTKY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BASU-MAD | 制造商:Crouzet 功能描述: |
| BASY20 | 制造商:Thomas & Betts 功能描述:Y CONN FOR BTRY CA 制造商:Thomas & Betts 功能描述:Battery Terminal (2/0)AWG Electro-Tin |
| BASY30 | 制造商:Thomas & Betts 功能描述:Y CONN FOR BTRY CA |
| BASY40 | 制造商:Thomas & Betts 功能描述:Battery Terminal (4/0)-2AWG Electro-Tin |
| BAT 15-02LRH E6327 | 功能描述:肖特基二极管与整流器 Silicon Schottky Diodes 4V 110mA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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