参数资料
型号: BAT54STA
厂商: Diodes Inc
文件页数: 1/2页
文件大小: 107K
描述: DIODE SCHOTTKY DUAL SOT23-3
产品目录绘图: SOT-23 Foot Print
其它图纸: SOT-23
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 100mA
电流 - 在 Vr 时反向漏电: 4µA @ 25V
电流 - 平均整流 (Io)(每个二极管): 200mA(DC)
电压 - (Vr)(最大): 30V
反向恢复时间(trr): 5ns
二极管类型: 肖特基
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对串联
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
产品目录页面: 1471 (CN2011-ZH PDF)
其它名称: BAT54SDKR
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995
?
FEATURES: Low VF
& High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR
30 V
Forward Current IF
200 mA
Forward Voltage @ IF
=10mA V
F
400 mV
Repetitive Peak Forward Current IFRM
300 mA
Non Repetitive Forward Current t<1s IFSM
600 mA
Power Dissipation at Tamb=25°C Ptot
330 mW
Storage Temperature Range Tstg
-55 to +150 °C
JunctionTemperature ¤ Tj
125 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V(BR)R
30 50 V
IR=10μA
Forward Voltage VF
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current IR
2.5 4
μA
VR=25V
Diode Capacitance CD
7.5 10 pF f=1MHz,VR=1V
Reverse Recover
Time
trr
5nsswitched from
I
F=10mA to IR=10mA
RL=100Ω, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3
2
1
3
2
1
2
3
1
3
1
BAT54 SERIES
1
3
2
BAT54 BAT54A BAT54S BAT54C Device Type
SINGLE COMMON
ANODE
SERIES COMMON
CATHODE
Pin Configuration
L4Z L42 L44 L43
Partmarking Detail
TA - Ambient Temperature ( °C)
PD v TA Characteristics
CT v VR Characteristics
Forward Voltage VF (V)
IF v VF Characteristics
μ
μ
μ
μ
Reverse Voltage VR
(V)
IRv VRCharacteristics
Reverse Voltage VR (V)
μ
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 4
3 - 5
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