参数资料
型号: BAV102
厂商: Fairchild Semiconductor
文件页数: 1/5页
文件大小: 117K
描述: DIODE 150V 200MA LL34
标准包装: 2,500
二极管类型: 标准
电压 - (Vr)(最大): 150V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 100nA @ 150V
电容@ Vr, F: 5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: MELF(LL-34)
供应商设备封装: LL-34
包装: 带卷 (TR)
BAV102 — High Voltage, General Purpose Diode
? 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAV102 Rev. 1.1.0 1
April 2013
BAV102
High Voltage, General Purpose Diode
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
WIV
Working Inverse Voltage 150 V
IO
Average Rectified Current 200 mA
IF
DC Forward Current 500 mA
if
Recurrent Peak Forward Current 600 mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 μs4.0A
TSTG
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature -65 to +200
°C
Symbol Parameter Value Units
PD
Power Dissipation 500 mW
Linear Derating Factor from TA
= 25
°C3.33mW/°C
RθJA
Thermal Resistance, Junction to Ambient 350
°C/W
SOD80
Cathode Band
Description
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking volt-
ages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
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