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参数资料
| 型号： | BAV199LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 描述： | DIODE SWITCH DUAL 70V SOT23 |
| 产品变化通告： | Copper Wire Change 29/Oct/2009 |
| 标准包装： | 10 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 电流 - 在 Vr 时反向漏电： | 5nA @ 70V |
| 电流 - 平均整流 (Io)（每个二极管）： | 215mA（DC） |
| 电压 - (Vr)（最大）： | 70V |
| 反向恢复时间(trr)： | 3µs |
| 二极管类型： | 标准 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | BAV199LT1OSCT |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 8
1
Publication Order Number:
BAV199LT1/D
BAV199LT1G,
SBAV199LT1G,
SBAV199LT3G
Dual Series Switching
Diode
Features
?
Low Leakage Current Applications
?
Medium Speed Switching Times
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
Vdc
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
IF(AV)
715
mAdc
Repetitive Peak Forward Current
IFRM
450
mAdc
Non?Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR?5 Board (Note 1), TA
= 25
?C
Derate above 25?C
PD
225
1.8
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
556
?C/W
Total Device Dissipation
Alumina Substrate (Note 2), TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?65 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping?
ORDERING INFORMATION
CASE 318
SOT?23
STYLE 11
MARKING DIAGRAM
JY M
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV199LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
JY = Specific Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAV199LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
SBAV199LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAV199LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual Series Switching Diode |
| BAV199LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Series Switching Diode |
| BAV199LT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Series Switching Diode |
| BAV199LT1G | 功能描述:二极管 - 通用，功率，开关 70V 215mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAV199LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:DIODE, SWITCHING, 70V, SOT-23 |
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