参数资料
型号: BAV199LT1
厂商: ON Semiconductor
文件页数: 2/3页
文件大小: 121K
描述: DIODE SWITCH DUAL 70V SOT23
产品变化通告: Copper Wire Change 29/Oct/2009
标准包装: 10
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
电流 - 在 Vr 时反向漏电: 5nA @ 70V
电流 - 平均整流 (Io)(每个二极管): 215mA(DC)
电压 - (Vr)(最大): 70V
反向恢复时间(trr): 3µs
二极管类型: 标准
速度: 标准恢复 >500ns,> 200mA(Io)
二极管配置: 1 对串联
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 剪切带 (CT)
其它名称: BAV199LT1OSCT
BAV199LT1G, SBAV199LT1G, SBAV199LT3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
?C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR)
= 100
Adc)
V(BR)
70
?
Vdc
Reverse Voltage Leakage Current
(VR
= 70 Vdc)
(VR
= 70 Vdc, T
J
= 150
?C)
IR
?
?
5.0
80
nAdc
Diode Capacitance
(VR
= 0 V, f = 1.0 MHz)
CD
?
2.0
pF
Forward Voltage
(IF
= 1.0 mAdc)
(IF
= 10 mAdc)
(IF
= 50 mAdc)
(IF
= 150 mAdc)
VF
?
?
?
?
900
1000
1100
1250
mVdc
Reverse Recovery Time
(IF
= I
R
= 10 mAdc) (Figure 1)
trr
?
3.0
s
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak)
is equal to 10 mA.
Notes: 3. tp
? t
rr
+10 V
2.0 k
820?
0.1 F
DUT
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 1.0 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; MEASURED
at iR(REC)
= 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Capacitance
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
1,000
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
, FORWARD CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
150?C
?55?C
25?C
80
TA
= 25
?C
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