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参数资料
| 型号： | BAV19WRH |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 0.2 A, 250 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 207K |
| 代理商： | BAV19WRH |
BAV19W/BAV20W/BAV21W
410mW High Voltage SMD Switching Diode
Small Signal Diode
These diodes are also available in DO-35, LL34 Package
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : Flat lead SOD-123F small outline plastic package
Min
1.5
3.3
0.5
2.5
0.8
0.05
Max
1.7
3.9
0.7
2.7
1.15
0.2
Min
0.059 0.067
0.130 0.154
0.020 0.028
0.098 0.106
0.031 0.045
0.002 0.008
Max
Part No.
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
Package
SOD-123F
SOD-123F
SOD-123F
SOD-123F
SOD-123F
SOD-123F
Packing Code
RH
RH
RH
RHG
RHG
RHG
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
H1
H2
H3
H1
H2
H3
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Pulse width= 1
μ
s
Pulse width= 1s
I
FSM
Unit (inch)
Pin Configuration
Marking Code : H1, H2, H3
Dimensions
(mm)
F
Unit (mm)
A
B
C
D
E
Polarity : Indicated by cathode band
Weight : 4.85±0.5 mg
Rating at 25°C ambient temperature unless otherwise specified.
Ordering Information
Units
mW
V
Symbol
P
D
Suggested PAD Layout
V
RRM
I
FRM
I
O
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Junction and Storage Temperature Range
T
J
, T
STG
-65 to + 150
Thermal Resistance (Junction to Ambient)
R
θ
JA
1
°C
Value
410
250
200
375
mA
mA
625
4
°C/W
A
Note1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
SOD-123F
Maximum Ratings and Electrical Characteristics
Features
Terminal: Matte tin plated, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
D
A
B
C
E
F
Version : D10
相关PDF资料 |
PDF描述 |
|---|---|
| BAV19WS/D6 | 0.2 A, 120 V, SILICON, SIGNAL DIODE |
| BAV20WS/D5 | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| BAV21WS/D5 | 0.2 A, 250 V, SILICON, SIGNAL DIODE |
| BAV20/F2 | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-204AH |
| BB804-0-GS18 | 42.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAV19WS | 功能描述:二极管 - 通用，功率，开关 SMALL SIGNAL SWTCH 200mW 250V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAV19WS _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAV19WS RR | 制造商:SKMI/Taiwan 功能描述:SOD323F;SWITCHING DIODE 200MW |
| BAV19WS RRG | 功能描述:DIODE GEN PURP 120V 200MA SOD323 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:120V 电流 - 平均整流（Io）:200mA 不同 If 时的电压 - 正向（Vf:1.25V @ 200mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:50ns 不同?Vr 时的电流 - 反向漏电流:100nA @ 100V 不同?Vr，F 时的电容:5pF @ 0V，1MHz 安装类型:表面贴装 封装/外壳:SC-90，SOD-323F 供应商器件封装:SOD-323F 工作温度 - 结:-65°C ~ 150°C 标准包装:3,000 |
| BAV19WS_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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