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| 型号： | BAV99LT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 92K |
| 描述： | DIODE SWITCH DUAL 70V SOT-23 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 1 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 电流 - 在 Vr 时反向漏电： | 2.5µA @ 70V |
| 电流 - 平均整流 (Io)（每个二极管）： | 215mA（DC） |
| 电压 - (Vr)（最大）： | 70V |
| 反向恢复时间(trr)： | 6ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | BAV99LT3GOSDKR |
?
Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 9
1
Publication Order Number:
BAV99LT1/D
BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non?Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR?5 Board (Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?65 to
+150
°C
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping?
ORDERING INFORMATION
CASE 318
SOT?23
STYLE 11
MARKING DIAGRAM
3
CATHODE/ANODE
ANODE
1
CATHODE
2
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G SOT?23
(Pb?Free)
10,000 / Tape & Reel
BAV99LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
http://onsemi.com
1
A7 M
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A7 = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
SBAV99LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
SBAV99LT3G SOT?23
(Pb?Free)
10,000 / Tape & Reel
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| BAV99Q-7-F | 制造商:Diodes Incorporated 功能描述: |
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