参数资料
型号: BAW56LT3G
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 94K
描述: DIODE SWITCH DUAL CA 70V SOT-23
产品变化通告: Wire Change 08/May/2007
Possible Adhesion Issue 11/July/2008
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
电流 - 在 Vr 时反向漏电: 2.5µA @ 70V
电流 - 平均整流 (Io)(每个二极管): 200mA(DC)
电压 - (Vr)(最大): 70V
反向恢复时间(trr): 6ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阳极
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
其它名称: BAW56LT3GOSDKR
?
Semiconductor Components Industries, LLC, 2012
September, 2012 ?
Rev. 8
1
Publication Order Number:
BAW56LT1/D
BAW56LT1G,
SBAW56LT1G,
BAW56LT3G,
SBAW56LT3G
Dual Switching Diode
Common Anode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
Non?Repetitive Peak Forward Current
t = 1 s (Note 3)
IFSM
4
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Square Wave; Tj
= 25
°C.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ANODE
3
CATHODE
1
2
CATHODE
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
A1 M
SOT?23 (TO?236)
CASE 318
STYLE 12
A1 = Device Code
M = Date Code*
= Pb?Free Package
BAW56LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
BAW56LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SBAW56LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
SBAW56LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
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