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参数资料
| 型号： | BC848B-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 72K |
| 代理商： | BC848B-13 |
DS11108 Rev. 17 - 2
2 of 4
BC846A-BC848C
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 4)
BC846
BC847
BC848
V(BR)CBO
80
50
30
—
V
IC = 10
mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 4) BC846
BC847
BC848
V(BR)CEO
65
45
30
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
BC846, BC847
(Note 3)
BC848
V(BR)EBO
6
5
——
V
IE = 1
mA, IC = 0
H-Parameters
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
A
Current Gain Group
B
C
hfe
hie
hoe
hre
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10-4
2x10-4
3x10-4
—
k
W
k
W
k
W
S
—
VCE = 5.0V, IC = 2.0mA,
f = 1.0kHz
DC Current Gain
Current Gain Group A
B
(Note 4)
C
hFE
110
200
420
180
290
520
220
450
800
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 4)
VCE(SAT)
—
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 4)
VBE(SAT)
—
700
900
—mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 4)
VBE(ON)
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 4)
BC846
BC847
BC848
ICES
ICBO
—
15
5.0
nA
A
VCE = 80V
VCE = 50V
VCE = 30V
VCB = 40V
VCB = 30V, TA = 150°C
Gain Bandwidth Product
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
—
3.0
—
pF
VCB = 10V, f = 1.0MHz
Noise Figure
NF
—
2
10
dB
VCE = 5V, IC = 200A,
RS = 2.0k
W,
f = 1.0kHz,
Df = 200Hz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
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