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参数资料
| 型号： | BCX54 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | 45 V, 1 A NPN medium power transistors |
| 中文描述： | 45伏，1安NPN型中等功率晶体管 |
| 封装： | BC54-10PA<SOT1061 (DFN1608D-2)|<<http://www.nxp.com/packages/SOT1061.html<1<Always Pb-free,;BC54-16PA<SOT1061 (DFN1608D-2)|<<http://www.nxp.com/packages/SOT1061.html<1 |
| 文件页数： | 1/22页 |
| 文件大小： | 1113K |
| 代理商： | BCX54 |
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Type number
[1]
[1]
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
[1]
Pulse test: t
p
300
s;
= 0.02.
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
Rev. 8 — 21 October 2011
Product data sheet
Product overview
Package
NXP
SOT223
SOT89
SOT1061
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP54
BCX54
BC54PA
BCP51
BCX51
BC51PA
Power management
MOSFET drivers
Amplifiers
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
Conditions
open base
Min
-
-
-
Typ
-
-
-
-
-
-
Max
45
1
2
250
160
250
Unit
V
A
A
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
63
[1]
63
[1]
100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BCX54 T/R | 功能描述:两极晶体管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BCX54,115 | 功能描述:两极晶体管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BCX54 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 |
| BCX54/ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Medium Power Transistor |
| BCX54/T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR SOT-89 |
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