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参数资料
| 型号： | BCX54 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | 45 V, 1 A NPN medium power transistors |
| 中文描述： | 45伏，1安NPN型中等功率晶体管 |
| 封装： | BC54-10PA<SOT1061 (DFN1608D-2)|<<http://www.nxp.com/packages/SOT1061.html<1<Always Pb-free,;BC54-16PA<SOT1061 (DFN1608D-2)|<<http://www.nxp.com/packages/SOT1061.html<1 |
| 文件页数： | 12/22页 |
| 文件大小： | 1113K |
| 代理商： | BCX54 |
BCP54_BCX54_BC54PA
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 21 October 2011
12 of 22
NXP Semiconductors
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
7. Characteristics
Table 8.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
[1]
Pulse test: t
p
300
s;
= 0.02.
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
–1
10
–5
10
10
–2
10
–4
10
2
10
–1
t
p
(s)
10
–3
10
3
1
0
duty cycle = 1
0.01
0.05
0.1
0.2
0.33
0.5
0.25
0.75
0.02
Characteristics
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
100
10
Unit
nA
A
I
EBO
emitter-base cut-off
current
DC current gain
-
-
100
nA
h
FE
V
CE
= 2 V
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
V
CE
= 2 V
I
C
= 150 mA
I
C
= 150 mA
I
C
= 500 mA; I
B
= 50 mA
[1]
63
-
-
-
-
250
-
[1]
63
[1]
40
DC current gain
h
FE
selection -10
h
FE
selection -16
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
[1]
63
-
-
-
160
250
0.5
[1]
100
V
CEsat
[1]
-
V
V
BE
C
c
V
CE
= 2 V; I
C
= 500 mA
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 50 mA;
f = 100 MHz
[1]
-
-
6
1
-
V
pF
-
f
T
transition frequency
100
180
-
MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BCX54 T/R | 功能描述:两极晶体管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BCX54,115 | 功能描述:两极晶体管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BCX54 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 |
| BCX54/ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Medium Power Transistor |
| BCX54/T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR SOT-89 |
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