参数资料
| 型号： | BD00GA5WEFJ-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .5A 8-HTSOP |
| 特色产品： | CMOS LDO Regulators |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 1.5 V ~ 13 V |
| 输入电压： | 4.5 V ~ 14 V |
| 电压 - 压降（标准）： | 0.6V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小值） |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-HTSOP-J |
| 包装： | 标准包装 |
| 其它名称： | BD00GA5WEFJ-E2DKR |
BD00GA5WEFJ
● Power Dissipation
◎ HTSOP-J8
4.0
⑤ 3.76W
3.0
Datasheet
Measure condition: mounted on a ROHM board, and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
? Solder the substrate and package reverse exposure
heat radiation part
2.0
1.0
④ 2.11W
③ 1.10W
② 0.82W
① 0.50W
① IC only
θ j-a=249.5 ℃ /W
② 1-layer (copper foil are :0mm × 0mm)
θ j-a=153.2 ℃ /W
③ 2-layer (copper foil are :15mm × 15m)
θ j-a=113.6 ℃ /W
④ 2-layer (copper foil are :70mm × 70mm)
θ j-a=59.2 ℃ /W
⑤ 4-layer (copper foil are :70mm × 70m)
θ j-a=33.3 ℃ /W
0
0
25
50
75
100
125
150
周囲温度 :Ta [ ℃ ]
Ambient Temperature :Ta [ ℃ ]
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the
allowed temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 85 ℃ .
2. Chip junction temperature (Tj) can be no higher than 150 ℃ .
Chip junction temperature can be determined as follows:
Calculation based on ambient temperature (Ta)
Tj=Ta+ θ j-a × W
＜ Reference values ＞
θ j-a: HTSOP-J8 153.2 ℃ /W
113.6 ℃ /W
59.2 ℃ /W
33.3 ℃ /W
1-layer substrate (copper foil density 0mm × 0mm)
2-layer substrate (copper foil density 15mm × 15mm)
2-layer substrate (copper foil density 70mm × 70mm)
4-layer substrate (copper foil density 70mm × 70mm)
Substrate size: 70mm × 70mm × 1.6mm (substrate with thermal
Most of the heat loss that occurs in the BD00GA5WEFJ is generated from the output Pch FET. Power loss is
determined by the total V CC -V O voltage and output current. Be sure to confirm the system input and output voltage and
the output current conditions in relation to the heat dissipation characteristics of the V CC and V O in the design. Bearing in
mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package
incorporated in the
BD00GA5WEFJ make certain to factor conditions such as substrate size into the thermal design.
Power consumption [W] = Input voltage (V CC ) - Output voltage (V O )
Example) Where V CC =5.0V, V O =3.3V, I O (Ave) = 0.1A,
Power consumption [W] = 5.0V - 3.3V × 0.1A
=0.17[W]
× I O (Ave)
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
10/17
TSZ02201-0R6R0A600020-1-2
15.May.2012 Rev.001
相关PDF资料 |
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| BD00GC0WEFJ-E2 | IC REG LDO ADJ 1A 8-HTSOP |
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| BD00HA5WEFJ-E2 | IC REG LDO ADJ .5A 8-HTSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BD00GC0EFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:500mA Secondary Variable Output LDO Regulators for Local Power Supplies |
| BD00GC0MEFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-LBH2 | 功能描述:1.0A VARIABLE OUTPUT INDUSTRIAL 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:14V 电压 - 输出（最小值/固定）:1.5V 电压 - 输出（最大值）:13V 压降（最大值）:1.2V @ 1A 电流 - 输出:1A 电流 - 电源（最大值）:1.2mA PSRR:- 控制特性:使能 保护功能:过流，超温，软启动 工作温度:-40°C ~ 105°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽）裸露焊盘 供应商器件封装:8-HTSOP-J 标准包装:1 |
| BD00GC0MEFJ-M | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-ME2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
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