参数资料
| 型号： | BD00GA5WEFJ-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 15/20页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .5A 8-HTSOP |
| 特色产品： | CMOS LDO Regulators |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 1.5 V ~ 13 V |
| 输入电压： | 4.5 V ~ 14 V |
| 电压 - 压降（标准）： | 0.6V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小值） |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-HTSOP-J |
| 包装： | 标准包装 |
| 其它名称： | BD00GA5WEFJ-E2DKR |
BD00GA5WEFJ
Datasheet
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
Pin A
Pin B
C
B
Pin B
Pin A
E
N
P +
N
P
P +
N
Parasitic
element
N
P +
N
P
P +
N
B
C
E
element
Parasitic element
P substrate
GND
Parasitic element
P substrate
GND GND
Parasitic
GND
Other adjacent elements
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
15/17
TSZ02201-0R6R0A600020-1-2
15.May.2012 Rev.001
相关PDF资料 |
PDF描述 |
|---|---|
| BD00GC0WEFJ-E2 | IC REG LDO ADJ 1A 8-HTSOP |
| BD00HA3WEFJ-E2 | IC REG LDO ADJ .3A 8-HTSOP |
| BD00HA5WEFJ-E2 | IC REG LDO ADJ .5A 8-HTSOP |
| BD00HC0WEFJ-E2 | IC REG LDO ADJ 1A 8-HTSOP |
| BD00HC5WEFJ-E2 | IC REG LDO ADJ 1.5A 8-HTSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BD00GC0EFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:500mA Secondary Variable Output LDO Regulators for Local Power Supplies |
| BD00GC0MEFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-LBH2 | 功能描述:1.0A VARIABLE OUTPUT INDUSTRIAL 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:14V 电压 - 输出（最小值/固定）:1.5V 电压 - 输出（最大值）:13V 压降（最大值）:1.2V @ 1A 电流 - 输出:1A 电流 - 电源（最大值）:1.2mA PSRR:- 控制特性:使能 保护功能:过流，超温，软启动 工作温度:-40°C ~ 105°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽）裸露焊盘 供应商器件封装:8-HTSOP-J 标准包装:1 |
| BD00GC0MEFJ-M | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
| BD00GC0MEFJ-ME2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 1.0A Variable Output LDO Regulator |
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