参数资料
型号: BD00HA3WEFJ-E2
厂商: Rohm Semiconductor
文件页数: 10/20页
文件大小: 0K
描述: IC REG LDO ADJ .3A 8-HTSOP
特色产品: CMOS LDO Regulators
标准包装: 1
稳压器拓扑结构: 正,可调式
输出电压: 1.5 V ~ 7 V
输入电压: 4.5 V ~ 8 V
电压 - 压降(标准): 0.6V @ 300mA
稳压器数量: 1
电流 - 输出: 300mA(最小值)
工作温度: -25°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
供应商设备封装: 8-HTSOP-J
包装: 标准包装
其它名称: BD00HA3WEFJ-E2DKR
BD00HA3WEFJ
● Power Dissipation
◎ HTSOP-J8
4.0
⑤ 3.76W
3.0
Datasheet
Measure condition: mounted on a ROHM board, and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
? Solder the substrate and package reverse exposure
heat radiation part
2.0
1.0
④ 2.11W
③ 1.10W
② 0.82W
① 0.50W
① IC only
θ j-a=249.5 ℃ /W
② 1-layer ( copper foil are :0mm × 0mm )
θ j-a=153.2 ℃ /W
③ 2-layer ( copper foil are :15mm × 15mm )
θ j-a=113.6 ℃ /W
④ 2-layer ( copper foil are :70mm × 70mm )
θ j-a=59.2 ℃ /W
⑤ 4-layer ( copper foil are :70mm × 70mm )
θ j-a=33.3 ℃ /W
0
0
25
50
75
100
125
150
周囲温度 :Ta [ ℃ ]
Ambient Temperature :Ta [ ℃ ]
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 85 ℃ .
2. Chip junction temperature (Tj) can be no higher than 150 ℃ .
Chip junction temperature can be determined as follows:
Calculation based on ambient temperature (Ta)
Tj=Ta+ θ j-a × W
< Reference values >
θ j-a: HTSOP-J8 153.2 ℃ /W
113.6 ℃ /W
59.2 ℃ /W
33.3 ℃ /W
1-layer substrate (copper foil density 0mm × 0mm)
2-layer substrate (copper foil density 15mm × 15mm)
2-layer substrate (copper foil density 70mm × 70mm)
4-layer substrate (copper foil density 70mm × 70mm)
Substrate size: 70mm × 70mm × 1.6mm (substrate with thermal via)
Most of the heat loss that occurs in the BD00HA3WEFJ is generated from the output Pch FET. Power loss is determined by
the total V CC -V O voltage and output current. Be sure to confirm the system input and output voltage and the output current
conditions in relation to the heat dissipation characteristics of the V CC and V O in the design. Bearing in mind that heat
dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in the
BD00HA3WEFJ make certain to factor conditions such as substrate size into the thermal design.
Power consumption [W] = Input voltage (V CC ) - Output voltage (V O ) × I O (Ave)
Example) Where V CC =5.0V, V O =3.3V, I O (Ave) = 0.1A,
Power consumption [W] = 5.0V - 3.3V × 0.1A
=0.17[W]
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
10/17
TSZ02201-0R6R0A600040-1-2
28.May.2012 Rev.001
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