参数资料
| 型号： | BD00HA3WEFJ-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 15/20页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .3A 8-HTSOP |
| 特色产品： | CMOS LDO Regulators |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 1.5 V ~ 7 V |
| 输入电压： | 4.5 V ~ 8 V |
| 电压 - 压降（标准）： | 0.6V @ 300mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 300mA（最小值） |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-HTSOP-J |
| 包装： | 标准包装 |
| 其它名称： | BD00HA3WEFJ-E2DKR |
BD00HA3WEFJ
Datasheet
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND
(P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
Pin A
Pin B
C
B
Pin B
Pin A
E
N
P +
N
P
P +
N
Parasitic
element
N
P +
N
P
P +
N
B
C
E
element
Parasitic
element
P substrate
GND
Parasitic element
P substrate
GND GND
Parasitic
GND
Other adjacent elements
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
15/17
TSZ02201-0R6R0A600040-1-2
28.May.2012 Rev.001
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BD00HA5EFJ-E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:300mA Secondary Variable Output LDO Regulators for Local Power Supplies |
| BD00HA5MEFJ-M | 制造商:ROHM 制造商全称:Rohm 功能描述:Automotive 0.5A Variable Output LDO Regulator |
| BD00HA5MEFJ-ME2 | 功能描述:Linear Voltage Regulator IC Positive Adjustable 1 Output 1.5 V ~ 7 V 500mA 8-HTSOP-J 制造商:rohm semiconductor 系列:汽车级，AEC-Q100 包装:* 零件状态:有效 稳压器拓扑:正，可调式 电压 - 输出:1.5 V ~ 7 V 电流 - 输出:500mA 电压 - 跌落（典型值）:0.6V @ 500mA 稳压器数:1 电压 - 输入:4.5 V ~ 8 V 电流 - 限制（最小值）:- 工作温度:-40°C ~ 105°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽）裸焊盘 供应商器件封装:8-HTSOP-J 标准包装:1 |
| BD00HA5WEFJ | 制造商:ROHM 制造商全称:Rohm 功能描述:500mA Secondary Variable Output LDO Regulators for Local Power Supplies |
| BD00HA5WEFJ_13 | 制造商:ROHM 制造商全称:Rohm 功能描述:500mA Variable Fixed Output LDO Regulators |
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