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参数资料
| 型号： | BD6066GU-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVR WHITE BCKLGT 17VCSP |
| 标准包装： | 1 |
| 拓扑： | PWM，升压（升压） |
| 输出数： | 4 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 类型 - 次要： | 白色 LED |
| 频率： | 800kHz ~ 1.2MHz |
| 电源电压： | 2.7 V ~ 22 V |
| 输出电压： | 40.5V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 17-VFBGA，CSPBGA |
| 供应商设备封装： | VCSP85H2 |
| 包装： | 标准包装 |
| 工作温度： | -30°C ~ 85°C |
| 产品目录页面： | 1371 (CN2011-ZH PDF) |
| 其它名称： | BD6066GU-E2DKR |
BD6066GU,BU6066EKN
Technical Note
● PCB Layout
In order to make the most of the performance of this IC, its PCB layout is very important. Characteristics such as efficiency
and ripple and the likes change greatly with layout patterns, which please note carefully.
to Power supply
PWM
C BAT
Reset
to GND
C IN
PWM
NC
GND
EN1
NC
LED1
to Cathode
of LED
C OUT
SBD
L
Tr
C REG
NC
VREG
SW
LED2
NC
LED3
to Anode
of each LED
R SENSE
SENSP
GND
SENSN
LED4
NC
TEST
RISET
Fig.32 PCB Layout
Connect the input bypath capacitor CIN(10μF) nearest to coil L, as shown in the upper diagram.
Wire the power supply line by the low resistance from CIN to VBAT pin.
And, when it can't be wired by the low resistance, connect the input capacitor CBAT(1μF) nearest to between VBAT and
GND pin, as shown in the upper diagram. Thereby, the input voltage ripple of the IC can be reduced.
Connect smoothing capacitor CREG of the regulator nearest to between VREG and GND pin, as shown in the upper diagram.
Connect schottky barrier diode SBD of the regulator nearest to between coil L and switching transistor Tr.
And connect output capacitor COUT nearest to between CIN and GND pin. Thereby, the output voltage ripple of the IC can
be reduced.
Connect switching transistor Tr nearest to SW pin. Wire coil L and switching transistor Tr, current sensing resistor R SENSE by
the low resistance. Wiring to the SENSP pin isn't Tr side, but connect it from R SENSE side.
Over current value may become low when wiring from Tr side.
Connect R SENSE of GND side isolated to SENS pin. Don’t wire between R SENSE and SNESN pin wiring from SNESN pin to
GND pin. After via SENSN pin, connect GND pin, as shown in the upper diagram.
Connect LED current setting resistor RISET nearest to ISET pin. There is possibility to oscillate when capacity is added to
ISET terminal, so pay attention that capacity isn't added. And, connect RISET of GND side directly to GND pin.
When those pins are not connected directly near the chip, influence is given to the performance of BD6066GU/EKN, and
may limit the current drive performance. As for the wire to the inductor, make its resistance component small so as to reduce
electric power consumption and increase the entire efficiency.
The PCB layout in consideration of these is shown in the next page.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
12/15
2011.06 - Rev.B
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