参数资料
型号: BD6222FP-EVAL-N
厂商: Rohm Semiconductor
文件页数: 16/22页
文件大小: 0K
描述: BOARD EVAL FOR BD6222FP
特色产品: H-Bridge Driver IC
标准包装: 1
主要目的: 电源管理,电机控制
嵌入式:
已用 IC / 零件: BD6222
主要属性: 1 个半桥驱动器
已供物品:
相关产品: BD6222HFPDKR-ND - IC H-BRIDGE DVR 18V 1CH 2A HRP7
BD6222HFPCT-ND - IC H-BRIDGE DVR 18V 1CH 2A HRP7
BD6222HFPTR-ND - IC H-BRIDGE DVR 18V 1CH 2A HRP7
BD6222FP-E2DKR-ND - IC H-BRIDGE DRIVER 1CH 2A HSOP25
BD6222FP-E2CT-ND - IC H-BRIDGE DRIVER 1CH 2A HSOP25
BD6222FP-E2TR-ND - IC H-BRIDGE DRIVER 1CH 2A HSOP25
其它名称: EVAL-N.BD6222FP
EVAL-N.BD6222FP-ND
BD622xxx Series
Datasheet
12)
Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
B
Pin B
Pin A
E
N
P +
N
P
P +
N
Parasitic
element
N
P +
N
P
P +
N
B
C
E
P substrate
P substrate
Parasitic
Parasitic element
GND
Parasitic element
GND
GND
GND element
Other adjacent elements
Fig.44 Example of monolithic IC structure
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
16/19
TSZ02201-0P2P0B300080-1-2
25.Dec.2012 Rev.002
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