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参数资料
| 型号： | BD6519FJ-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH HIGH SIDE 1CH SOP-J8 |
| 特色产品： | High Side Switch Regulators |
| 标准包装： | 1 |
| 类型： | 高端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 100 毫欧 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 1A |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP-J |
| 包装： | 标准包装 |
| 产品目录页面： | 1372 (CN2011-ZH PDF) |
| 其它名称： | BD6519FJ-E2DKR |
Datasheet
1 Channel High Side Switch ICs
1.0A Current Limit High Side Switch ICs
BD2041AFJ
BD2051AFJ
● General Description
● Key Specifications
Single channel high side switch IC for USB port is a
high side switch having over current protection used in
power supply line of universal serial bus (USB).
Input voltage range:
Continuous current load:
ON resistance :
2.7V to 5.5V
0.5A(Typ.)
80m ? (Typ.)
N-channel power MOSFET of low on resistance and
Over current threshold: 0.7A min., 1.6A max.
low supply current are realized in this IC.
Standby current:
0.01 μ A (Typ.)
And, over current detection circuit, thermal shutdown
circuit, under voltage lockout and soft start circuit are
Operating temperature range: -40 ℃ to +85 ℃
built in.
● Features
Built-in low on resistance Nch MOS FET
Switch.( Typ = 80m ? )
Continuous current load 0.5A
Control input logic
Active-Low : BD2041AFJ
Active-High: BD2051AFJ
Soft start circuit
Over current detection
Thermal shutdown
Under voltage lockout
Open drain error flag output
Reverse-current protection when power switch off
● Applications
USB hub in consumer appliances, Car accessory, PC,
PC peripheral equipment, and so forth
● Typical Application Circuit
5V(typ.)
● Package
SOP-J8
W(Typ.) D(Typ.) H (Max.)
4.90mm x 6.00mm x 1.65mm
SOP-J8
GND
OUT
VBUS
C IN
IN
IN
OUT
OUT
+
C L -
D+
D-
● Lineup
EN(/EN) /OC
GND
Min.
Over current detection
Typ. Max.
Control input logic
Package
Orderable Part Number
0.7A
0.7A
1.0A
1.0A
1.6A
1.6A
Low
High
SOP-J8
SOP-J8
Reel of 2500
Reel of 2500
BD2041AFJ-E2
BD2051AFJ-E2
○ Product structure ： Silicon monolithic integrated circuit
○ This product is not designed protection against radioactive rays
www.rohm.com
? 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 14 ? 001
1/22
TSZ02201-0E3E0H300290-1-2
08.Mar.2013 Rev.001
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