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参数资料
| 型号： | BD6592MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 20/34页 |
| 文件大小： | 0K |
| 描述： | IC LED DRVR WHITE BCKLGT 24-VQFN |
| 标准包装： | 1 |
| 拓扑： | PWM，升压（升压） |
| 输出数： | 6 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 类型 - 次要： | 白色 LED |
| 频率： | 800kHz ~ 1.2MHz |
| 电源电压： | 2.7 V ~ 22 V |
| 输出电压： | 43V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-VFQFN 裸露焊盘 |
| 供应商设备封装： | VQFN024V4040 |
| 包装： | 标准包装 |
| 工作温度： | -30°C ~ 85°C |
| 产品目录页面： | 1372 (CN2011-ZH PDF) |
| 其它名称： | BD6592MUV-E2DKR |
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BD6592MUV
Datasheet
● The Coil Selection
The DC/DC is designed by more than 4.7μH. When L value sets to a lower value, it is possibility that the specific
sub-harmonic oscillation of current mode DC / DC will be happened.
Please do not let L value to 3.3μH or below.
And, L value increases, the phase margin of DC / DC becomes to zero. Please enlarge the output capacitor value when you
increase L value.
Example)
4.7μH
6.8μH
10μH
=
=
=
output capacitor
output capacitor
output capacitor
2.2μF/50V
2.2μF/50V
2.2μF/50V
1pcs
2pcs
3pcs
This value is just examples, please made sure the final judgment is under an enough evaluation.
● PCB Layout
In order to make the most of the performance of this IC, its PCB layout is very important. Characteristics such as efficiency
and ripple and the likes change greatly with layout patterns, which please note carefully.
to Power Supply
C IN
L
C BAT
PWM
Reset
C REG
to Cathode
of LED
SBD
C OUT
Tr
VDET
N.C.
GND
LED6
LED5
LED4
to Anode
SW
GND
of each LED
R SENSE
SENSP
TEST
LED3
LED2
to GND
RISET
Figure 44. Layout
Connect the input bypath capacitor CIN(10μF) nearest to coil L, as shown in the upper diagram.
Wire the power supply line by the low resistance from CIN to VBAT pin. Thereby, the input voltage ripple of the IC can be
reduced. Connect smoothing capacitor CREG of the regulator nearest to between VREG and GND pin, as shown in the
upper diagram. Connect schottky barrier diode SBD of the regulator nearest to between coil L and switching transistor Tr.
And connect output capacitor COUT nearest to between CIN and GND pin. Thereby, the output voltage ripple of the IC can
be reduced.
Connect switching transistor Tr nearest to SW pin. Wire coil L and switching transistor Tr, current sensing resistor R SENSE by
the low resistance. Wiring to the SENSP pin isn't Tr side, but connect it from R SENSE side. Over current value may become
low when wiring from Tr side. Connect R SENSE of GND side isolated to SENS pin. Don’t wire between R SENSE and SNESN
pin wiring from R SENSE pin to GND pin. And R SENSE GND line must be wired directly to GND pin of output capacitor. It
has the possibility that restricts the current drive performance by the influence of the noise when other GND is connected to
this GND.
Connect LED current setting resistor RISET nearest to ISET pin. There is possibility to oscillate when capacity is added
to ISET terminal, so pay attention that capacity isn't added. And, RISET of GND side must be wired directly to GND
pin.
When those pins are not connected directly near the chip, influence is given to the performance of BD6592MUV, and may
limit the current drive performance. As for the wire to the inductor, make its resistance component small so as to reduce
electric power consumption and increase the entire efficiency.
The layout pattern in consideration of these is shown in next page.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
20 / 31
TSZ02201-0G3G0C400210-1-2
21.Dec.2012 Rev.001
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