参数资料
型号: BD8132FV-E2
厂商: Rohm Semiconductor
文件页数: 10/23页
文件大小: 0K
描述: IC PWR SUP CORRECTION SSOP-B40
标准包装: 2,000
系列: *
BD8132FV, BD8139AEFV
Technical Note
● Auto-read function
The auto-read function enables the IC's 1 kbit microwire type external memory to be automatically read.
This block operates in synchronization with the external input CLK's falling edge to output the external memory chip select
signal CS as well as the memory read data signal MEMDO.
The read data signal consists of a start bit for the external memory, a read code, and a read address. When this signal is sent
to the external memory, the memory outputs the data corresponding to the indicated address. Data output from the memory
is read from the MEMDI pin, and this block automatically generates the serial DATA and LATCH signals and writes the
memory data to the register. Memory reads are synchronized to the CLK's falling edge.
Read addresses start from address 00H and repeat until address 12H, so data must be stored from address 00H to address 12H.
The auto-read function is controlled using the R/W signal. Read access to the external memory is performed continuously
while the R/W signal is low. To access the external memory from another device, the R/W signal must be set to high. When
the R/W signal is set to high, the CS and MEMDO pins enter a high-impedance state.
Auto-read timing
R/W
CLK
CS
High-impedance
MEMDO
Address 00H
Address 01H
High-impedance
Start bit and read code
MEMDI
Memory data
D15
to
D0
INTERNAL
DATA
D15
to
D0
INTERNAL
LATCH
Fig. 23 Auto-read Timing Chart
MSB
External m emory data format
LSB
D15
d1
D14
d2
D13
d3
D12
d4
D11
d5
D10
d6
D9
d7
D8
d8
D7
d9
D6
d10
D5
d11
D4
d12
D3
d13
D2
d14
D1
d15
D0
d16
OSC
mode
R egister address
Fig. 24 External Memory Data Table
DAC data
● Serial communications timing chart
● Auto-read timing chart
tRW
LATCH
R/W
tRC
tCR
CLK
tLC
tWL
tWH
tCL
tLA
C
tCDO
MEMDO
tSC
CS
tCCS
tDIC
SDIN
MEMDI
Fig.25
Fig.26
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
10/20
2009.07 - Rev.B
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