参数资料
| 型号： | BD9137MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 11/21页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 4A 20VQFN |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 3.3 V |
| 输入电压： | 2.7 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 4A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 20-VQFN |
| 其它名称： | BD9137MUV-E2DKR |
BD9137MUV
● Switching Regulator Efficiency
Efficiency ? may be expressed by the equation shown below:
Datasheet
η =
V OUT × I OUT
Vin × Iin
× 100[%]=
P OUT
Pin
× 100[%]=
P OUT
P OUT +P D α
× 100[%]
1) ON resistance dissipation of inductor and FET ： PD(I R)
1) PD(I R)=I OUT × (R COIL +R ON ) (R COIL [ Ω ] ： DC resistance of inductor, R ON [ Ω ] ： ON resistance of FET, I OUT [A] ： Output
2) PD(Gate)=Cgs × f × V
(Cgs[F] ： Gate capacitance of FET 、 f[H] ： Switching frequency 、 V[V] ： Gate driving voltage of FET)
Vin × C RSS × I OUT × f
I DRIVE
4) PD(ESR)=I RMS × ESR (I RMS [A] ： Ripple current of capacitor 、 ESR[ Ω ] ： Equivalent series resistance.)
Efficiency may be improved by reducing the switching regulator power dissipation factors P D α as follows:
Dissipation factors:
2
2) Gate charge/discharge dissipation ： PD(Gate)
3) Switching dissipation ： PD(SW)
4) ESR dissipation of capacitor ： PD(ESR)
5) Operating current dissipation of IC ： PD(IC)
2 2
current.)
2
2
3) PD(SW)= (C RSS [F] ： Reverse transfer capacitance of FET 、 I DRIVE [A] ： Peak current of gate.)
2
5) PD(IC)=Vin × I CC
(I CC [A] ： Circuit current.)
● Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions,
however, including lower input voltage, higher output voltage, heavier load, and/or higher temperature, the
permissible dissipation and/or heat generation must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
② 4 layers (1st,4thcopper foil area : 10.29mm )
P=I OUT × R ON
4.5
4.0
3.0
① 3.56W
① 4 layers (copper foil area : 5505mm 2 )
(copper foil in each layers)
θ j-a=35.1 ℃ /W
(2nd ,3rd copper foil area : 5505mm 2 )
θ j-a=56.6 ℃ /W
③ 1 layer (copper foil area :10.29mm 2 )
θ j-a=178.6 ℃ /W
④ IC only
θ j-a=367.6 ℃ /W
2
2
R ON =D × R ONP +(1-D)R ONN
D ： ON duty (=V OUT /V CC )
R ONH ： ON resistance of Highside MOS FET
R ONL ： ON resistance of Lowside MOS FET
2.0
② 2.21W
I OUT ： Output current
1.0
③ 0.70W
④ 0.34W
0
0
25
50
75
100 105
125
150
Ambient temperature:Ta [ ℃ ]
Fig.27 Thermal derating curve
(VQFN020V4040)
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
11/19
TSZ02201-0J3J0AJ00160-1-2
02.MAR.2012 Rev.001
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