参数资料
| 型号： | BD9850FVM-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/17页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 8-MSOP |
| 标准包装： | 1 |
| PWM 型： | 控制器 |
| 输出数： | 1 |
| 频率 - 最大： | 2MHz |
| 电源电压： | 4 V ~ 9 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VSSOP，8-MSOP（0.110"，2.80mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | BD9850FVM-DKR BD9850FVM-DKR-ND BD9850FVMDKR |
8) IC pin input
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements to keep them isolated. Pin junctions are formed at the
intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each
potential is as follows:
When GND > Pin A and GND > Pin B, the Pin junction operates as a parasitic diode.
When Pin B > GND > Pin A, the P?N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits,
operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
(Pin A)
(Pin B)
C
B
E
GND
N
P+
P
P+
P+
P
P+
N
N
N
Player
N
N
N
Player
Parasitic element
(Pin A)
GND
GND
Parasitic element
Parasitic element
(Pin B)
Other proximity element
B
GND
C
E
GND
Parasitic element
Fig. 28 Typical simple construction of monolithic IC
9) Common impedance
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage
on the power ground
line may damage the device.
10) On the application shown below, Vcc is short-circuited to the Ground with external diode charged, internal circuits may be damaged.
recommended to insert a backflow prevention diode in series with the Vcc or a bypass diode between each pin and Vcc.
Bypass diode
Backflow prevention diode
Vcc
Output pin
Fig. 29
14/16
相关PDF资料 |
PDF描述 |
|---|---|
| RBM10DTMD-S273 | CONN EDGECARD 20POS R/A .156 SLD |
| GCM30DTMI-S189 | CONN EDGECARD 60POS R/A .156 SLD |
| GMM24DSEF-S13 | CONN EDGECARD 48POS .156 EXTEND |
| GEM18DTMT-S273 | CONN EDGECARD 36POS R/A .156 SLD |
| RCM25DTMI-S189 | CONN EDGECARD 50POS R/A .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BD9851EFV | 制造商:ROHM 制造商全称:Rohm 功能描述:Single-output High-frequency Step-down Switching Regulator(Controller type) |
| BD9851EFV-E2 | 功能描述:电压监测器/监控器 REG CTRLR 2-CH RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| BD9853AFV | 制造商:ROHM 制造商全称:Rohm 功能描述:Single/Dual-output High-frequency Step-down Switching Regulato (Controller type) |
| BD9853AFV-E2 | 功能描述:直流/直流开关调节器 4.5-16V 100-2000kHz 2 Chan Step-Down RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| BD9853FV | 制造商:ROHM 制造商全称:Rohm 功能描述:2 Channel Switching Regulator Controller |
发布紧急采购，3分钟左右您将得到回复。