型号: | BDW21A |
英文描述: | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
中文描述: | 叩 |
文件页数: | 1/1页 |
文件大小: | 12K |
代理商: | BDW21A |
相关PDF资料 |
PDF描述 |
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BDW21B | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
BDW22B | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :340V; Capacitance, Cd:1000pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:340V |
BDW22C | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:150Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :395V; Capacitance, Cd:800pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:395V |
BDW21 | Bipolar NPN Device |
BDW22A | Triac; Leaded Process Compatible:Yes |
相关代理商/技术参数 |
参数描述 |
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BDW21B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-3 |
BDW21C | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
BDW22 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
BDW22A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
BDW22B | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 |