| 型号 | 厂商 | 描述 |
| bds19cecc |
DIODE TVS 160V 1500W UNI 5% SMC | |
| bds18cecc |
DIODE TVS 150V 1500W UNI 5% SMC | |
| bds18 |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds18smd |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds19smd05 |
DIODE TVS 160V 1500W BI 5% SMC | |
| bds19smd |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds19 |
SEMELAB LTD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bdw21a |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA | |
| bdw21b |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA | |
| bdw22b |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :340V; Capacitance, Cd:1000pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:340V | |
| bdw22c |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:150Vrms; Peak Surge Current (8/20uS), Itm:6000A; Clamping Voltage 8/20us Max :395V; Capacitance, Cd:800pF; Package/Case:14mm Disc; Clamping Voltage Max, Vc:395V | |
| bdw21 |
SEMELAB LTD | Bipolar NPN Device |
| bdw22a |
Triac; Leaded Process Compatible:Yes | |
| bdw22 |
SEMELAB LTD | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| bdw51b |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| bdx93 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| bdw91 2 3 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:350VDC; Peak Surge Current (8/20uS), Itm:3500A; Clamping Voltage 8/20us Max :710V; Capacitance, Cd:200pF; Package/Case:10mm Disc | |
| bdw92 2 3 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:300Vrms; Voltage Rating DC, Vdc:385VDC; Peak Surge Current (8/20uS), Itm:3500A; Clamping Voltage 8/20us Max :775V; Capacitance, Cd:180pF; Package/Case:10mm Disc | |
| bdx35 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN switching transistors |
| bdx36 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN switching transistors |
| bdx37 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN switching transistors |
| bdx42 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN Darlington transistors |
| bdx43 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN Darlington transistors |
| bdx44 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 3.3V; Power: 2W; 2W Single and Dual Outputs in DIP 14; 3kVDC and 4kVDC Isolation; Optional Continuous Short Circuit Protected; Custom Solutions Available; UL94V-0 Package Material; Efficiency up to 85% |
| bdx45 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | PNP Darlington transistors |
| bdx47 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | PNP Darlington transistors |
| bdy26a |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes | |
| bdy26b |
Varistor; Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:369VDC; Peak Surge Current (8/20uS), Itm:400A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):11J; Capacitance, Cd:45pF; Package/Case:5mm Disc | |
| bdy26c |
VARISTOR 470V 12J 5MM RADIAL ZA | |
| bdy27as |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:30Vrms; Voltage Rating DC, Vdc:38VDC; Peak Surge Current (8/20uS), Itm:500A; Clamping Voltage 8/20us Max :93V; Peak Energy (10/1000uS):4.5J; Capacitance, Cd:2000pF | |
| bdy27b |
VARISTOR, 105J 480VAC | |
| bdy27c |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:480Vrms; Voltage Rating DC, Vdc:640VDC; Peak Surge Current (8/20uS), Itm:40000A; Clamping Voltage 8/20us Max :1240V; Capacitance, Cd:2700pF; Package/Case:40mm Disc | |
| bdy27cx |
VARISTOR TVS MULTI 48V 250A 1210 | |
| bdy27 |
SEMELAB LTD | Bipolar NPN Device |
| bdy90p 2 3 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | TO-3 | |
| bdy90s 2 3 |
FUSE FAST 800MA IEC SHORT TR5 | |
| bdy90 2 3 |
意法半导体 | MIXER,RF=5-3500MHZ |
| bdy90 2 3 |
CENTRAL SEMICONDUCTOR CORP | Power Transistors |
| be57302100m |
KABEL DATEN 2PAARE VERDRILLT 1/0.65 100M | |
| be57829 |
LITZE VERZ 2 VERDR PAARE 7/0203MM 100M | |
| bea010100000 |
FFP1(S) FOLD FLAT DISPBLE MASK | |
| bea060000025 |
FFP1(S) FOLD FLAT DISPBLE MASK | |
| beb020000000 |
FFP2(S) FOLD FLAT DISPBLE MASK | |
| bed572hd 2 3 |
Optoelectronic | |
| bes321er 2 3 |
Optoelectronic | |
| bes321gw 2 3 |
Optoelectronic | |
| bes321hd 2 3 |
Optoelectronic | |
| bes321yy 2 3 |
Optoelectronic | |
| bes322er 2 3 |
FUSE TTCP TELCOM 1.25A SHORT LD | |
| bes322gw 2 3 |
FUSE TTCP TELCOM 1.50A SHORT LD |