参数资料
型号: BDX43
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: NPN Darlington transistors
中文描述: 1 A, NPN, Si, POWER TRANSISTOR, TO-126
封装: PLASTIC, TO-126, 3 PIN
文件页数: 3/8页
文件大小: 66K
代理商: BDX43
1997 Jul 02
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BDX42
BDX43
BDX44
collector-emitter voltage
BDX42
BDX43
BDX44
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
open emitter
60
80
90
V
V
V
V
CES
V
BE
= 0
65
65
45
60
80
5
1
2
100
1.25
5
+150
150
+150
V
V
V
V
A
A
mA
W
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
B
P
tot
open collector
T
amb
25
°
C
T
mb
100
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air
100
10
K/W
K/W
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