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参数资料
| 型号： | BDX45 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | PNP Darlington transistors |
| 中文描述： | 1 A, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC, TO-126, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 65K |
| 代理商： | BDX45 |
1997 Jul 02
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BDX45
BDX47
collector-emitter voltage
BDX45
BDX47
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
open emitter
60
90
V
V
V
CES
V
BE
= 0
65
65
45
80
5
1
2
100
1.25
5
+150
150
+150
V
V
V
A
A
mA
W
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
B
P
tot
open collector
T
amb
≤
25
°
C
T
mb
≤
100
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air
100
10
K/W
K/W
相关PDF资料 |
PDF描述 |
|---|---|
| BDX47 | PNP Darlington transistors |
| BDY26A | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes |
| BDY26B | Varistor; Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:369VDC; Peak Surge Current (8/20uS), Itm:400A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):11J; Capacitance, Cd:45pF; Package/Case:5mm Disc |
| BDY26C | VARISTOR 470V 12J 5MM RADIAL ZA |
| BDY27AS | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:30Vrms; Voltage Rating DC, Vdc:38VDC; Peak Surge Current (8/20uS), Itm:500A; Clamping Voltage 8/20us Max :93V; Peak Energy (10/1000uS):4.5J; Capacitance, Cd:2000pF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX45_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX46 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX47 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX53 | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX53A | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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