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参数资料
| 型号： | BDX45 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | PNP Darlington transistors |
| 中文描述： | 1 A, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC, TO-126, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 65K |
| 代理商： | BDX45 |
1997 Jul 02
4
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BDX45
BDX47
collector cut-off current
BDX45
BDX47
emitter cut-off current
DC current gain
I
E
= 0; V
CB
=
60 V
I
E
= 0; V
CB
=
90 V
100
100
nA
nA
I
CES
V
BE
= 0; V
CE
=
45 V
V
BE
= 0; V
CE
=
80 V
I
C
= 0; V
EB
=
4 V
V
CE
=
10 V; see Fig. 2
I
C
=
150 mA
I
C
=
500 mA
I
C
=
500 mA; I
B
=
0.5 mA
I
C
=
500 mA; I
B
=
0.5 mA; T
j
= 150
°
C
I
C
=
1 A; I
B
=
4 mA
I
C
=
1 A; I
B
=
4 mA; T
j
= 150
°
C
I
C
=
500 mA; I
B
=
0.5 mA
I
C
=
1 A; I
B
=
4 mA
I
C
=
500 mA; V
CE
=
5 V; f = 100 MHz
50
50
50
nA
nA
nA
I
EBO
h
FE
1000
2000
200
1.3
1.3
1.6
1.6
1.9
2.2
V
CEsat
collector-emitter saturation
voltage
V
V
V
V
V
V
MHz
V
BEsat
base-emitter saturation voltage
f
T
transition frequency
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
500 mA; I
Bon
=
0.5 mA;
I
Boff
= 0.5 mA
500
200
300
700
550
150
ns
ns
ns
ns
ns
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX45_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX46 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX47 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX53 | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX53A | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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