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参数资料
| 型号： | BDX45 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | PNP Darlington transistors |
| 中文描述： | 1 A, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC, TO-126, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 65K |
| 代理商： | BDX45 |
1997 Jul 02
5
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
Fig.2 DC current gain; typical values.
V
CE
=
10 V.
handbook, full pagewidth
hFE
0
10
1
2000
1000
3000
4000
5000
MGD839
1
10
10
2
10
3
IC (mA)
Fig.3 Test circuit for switching times.
V
i
=
10 V; T = 200
μ
s; t
p
= 6
μ
s; t
r
= t
f
≤
3 ns.
R1 = 56
; R2 = 10 k
; R
B
= 10 k
; R
C
= 18
.
V
BB
= 1.8 V; V
CC
=
10.7 V.
Oscilloscope input impedance Z
i
= 50
.
andbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
相关PDF资料 |
PDF描述 |
|---|---|
| BDX47 | PNP Darlington transistors |
| BDY26A | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes |
| BDY26B | Varistor; Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:369VDC; Peak Surge Current (8/20uS), Itm:400A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):11J; Capacitance, Cd:45pF; Package/Case:5mm Disc |
| BDY26C | VARISTOR 470V 12J 5MM RADIAL ZA |
| BDY27AS | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:30Vrms; Voltage Rating DC, Vdc:38VDC; Peak Surge Current (8/20uS), Itm:500A; Clamping Voltage 8/20us Max :93V; Peak Energy (10/1000uS):4.5J; Capacitance, Cd:2000pF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX45_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX46 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX47 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX53 | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX53A | 功能描述:达林顿晶体管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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