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参数资料
| 型号： | BDX37 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN switching transistors |
| 中文描述： | 5 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 71K |
| 代理商： | BDX37 |
1997 Apr 16
3
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BDX35
BDX36; BDX37
collector-emitter voltage
BDX35; BDX36
BDX37
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
100
120
V
V
V
CEO
open base
65
65
60
75
5
5
10
2
15
1.25
+150
150
+150
V
V
V
A
A
A
W
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
open collector
T
mb
≤
75
°
C
T
amb
≤
25
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air
100
5
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BDX35
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
100
10
nA
μ
A
I
CBO
collector cut-off current
BDX36; BDX37
I
E
= 0; V
CB
= 100 V
I
E
= 0; V
CB
= 100 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0.5 A; V
CE
= 10 V; see Fig.2
100
10
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BDX35; BDX36
BDX37
collector-emitter saturation voltage
collector-emitter saturation voltage
BDX35; BDX37
BDX36
45
45
130
80
450
450
900
V
CEsat
V
CEsat
I
C
= 5 A; I
B
= 0.5 A
mV
I
C
= 7 A; I
B
= 0.7 A
I
C
= 10 A; I
B
= 1 A
1.2
2
V
V
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