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参数资料
| 型号： | BDX42 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Darlington transistors |
| 中文描述： | 1 A, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC, TO-126, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 66K |
| 代理商： | BDX42 |
1997 Jul 02
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CBO
collector cut-off current
BDX42
BDX43
BDX44
collector cut-off current
BDX42
BDX43
BDX44
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 100 V
100
100
100
nA
nA
nA
I
CES
V
BE
= 0; V
CE
= 45 V
V
BE
= 0; V
CE
= 60 V
V
BE
= 0; V
CE
= 80 V
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V; see Fig. 2
I
C
= 150 mA
I
C
= 500 mA
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; I
B
= 0.5 mA; T
j
= 150
°
C
50
50
50
50
nA
nA
nA
nA
I
EBO
h
FE
1000
2000
1.3
1.3
V
CEsat
collector-emitter saturation voltage
V
V
V
CEsat
collector-emitter saturation voltage
BDX42; BDX44
I
C
= 1 A; I
B
= 4 mA
I
C
= 1 A; I
B
= 4 mA; T
j
= 150
°
C
1.6
1.6
V
V
V
CEsat
collector-emitter saturation voltage
BDX43
I
C
= 1 A; I
B
= 1 mA
I
C
= 1 A; I
B
= 1 mA; T
j
= 150
°
C
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 1 A; I
B
= 4 mA
1.6
1.8
1.9
V
V
V
V
BEsat
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
BDX42; BDX44
base-emitter saturation voltage
BDX43
transition frequency
2.2
V
V
BEsat
I
C
= 1 A; I
B
= 1 mA
200
2.2
V
MHz
f
T
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
0.5 mA
500
200
300
1300
950
350
ns
ns
ns
ns
ns
ns
相关PDF资料 |
PDF描述 |
|---|---|
| BDX43 | NPN Darlington transistors |
| BDX44 | RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 3.3V; Power: 2W; 2W Single and Dual Outputs in DIP 14; 3kVDC and 4kVDC Isolation; Optional Continuous Short Circuit Protected; Custom Solutions Available; UL94V-0 Package Material; Efficiency up to 85% |
| BDX45 | PNP Darlington transistors |
| BDX47 | PNP Darlington transistors |
| BDY26A | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX42/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR DARLINGTON |
| BDX42_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX43 | 制造商:NXP Semiconductors 功能描述: |
| BDX44 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX44/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR DARLINGTON |
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