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参数资料
| 型号： | BDS18SMD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| 中文描述： | 8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-276AB |
| 封装： | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | BDS18SMD |
2
1
3
2.41 (0.095)
(0.030)
min.
0.127 (0.005)
(0.296)
0
(
m
3.175 (0.125)
Max.
0.50 (0.020)
max.
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
BDS18SMD05
Bipolar PNP Device.
V
CEO
= 120V
I
C
= 15A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
120
V
I
C(CONT)
15
A
h
FE
@ 2/0.5 (V
CE
/ I
C
)
40
250
-
f
t
30M
Hz
P
D
50
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar PNP Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD0.5 (TO276AA)
相关PDF资料 |
PDF描述 |
|---|---|
| BDS19SMD05 | DIODE TVS 160V 1500W BI 5% SMC |
| BDS19SMD | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS19 | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDW21A | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
| BDW21B | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BDS18SMD05 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| BDS19 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| BDS19CECC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
| BDS19SMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| BDS19SMD05 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
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