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参数资料
| 型号： | BDX54F |
| 厂商： | 意法半导体 |
| 英文描述： | Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管) |
| 中文描述： | 互补硅功率达林顿晶体管（互补硅功率达林顿晶体管） |
| 文件页数： | 1/4页 |
| 文件大小： | 69K |
| 代理商： | BDX54F |
BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53F
is a silicon epitaxial-base NPN
power
transistors
in
monolithic
Darlington
configuration and are mounted in Jedec TO-220
plastic package. It is intented for use in power
linear and switching applications.
The complementary PNP types is BDX54F.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDX53F
PNP
BDX54F
VCBO
Collector-Base Voltage (IE = 0)
160
V
VCEO
Collector-Emitter Voltage (IB = 0)
160
V
VEBO
Emitter-base Voltage (IC = 0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current
12
A
IB
Base Current
0.2
A
Ptot
Total Dissipation at Tc
≤ 25 oC60
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
2
3
TO-220
R1 Typ. = 10 K
R2 Typ. = 150
1/4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX54S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 6A I(C) | TO-39 |
| BDX54-S | 功能描述:达林顿晶体管 45V 8A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX54TU | 功能描述:达林顿晶体管 PNP Darlington 8A 100V RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX62 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 |
| BDX62_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:PNP SILICON DARLINGTON POWER TRANSISTOR |
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