- 您现在的位置：买卖IC网 > PDF目录378409 > BF1100R (NXP Semiconductors N.V.) N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1100R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47 |
| 文件页数： | 10/15页 |
| 文件大小： | 311K |
| 代理商： | BF1100R |
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
Fig.23 Input admittance as a function of
frequency; typical values.
V
DS
= 12 V; V
G2
= 4 V.
I
D
= 10 mA; T
amb
= 25
°
C.
handbook, halfpage
10
3
MLD176
10
2
10
10
1
2
10
1
yis
(mS)
f (MHz)
bis
gis
Fig.24 Reverse transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 12 V; V
G2
= 4 V.
I
D
= 10 mA; T
amb
= 25
°
C.
10
3
MLD177
10
2
10
10
3
10
2
10
1
yrs
(
μ
S)
10
3
10
10
1
2
f (MHz)
yrs
rs
(deg)
rs
Fig.25 Forward transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 12 V; V
G2
= 4 V.
I
D
= 10 mA; T
amb
= 25
°
C.
10
3
MLD178
10
2
10
1
10
2
10
1
10
10
2
yfs
(mS)
yfs
f (MHz)
fs
(deg)
fs
Fig.26 Output admittance as a function of
frequency; typical values.
V
DS
= 12 V; V
G2
= 4 V.
I
D
= 10 mA; T
amb
= 25
°
C.
handbook, halfpage
10
3
MLD179
10
2
10
10
1
1
10
2
yos
(mS)
f (MHz)
bos
gos
Rev. 02 - 13 November 2007
10 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
| BF1101WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100R,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100R,235 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 14V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100RT/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R |
| BF1100T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF1100WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FET |
发布紧急采购，3分钟左右您将得到回复。