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参数资料
| 型号： | BF1100R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47 |
| 文件页数： | 5/15页 |
| 文件大小： | 311K |
| 代理商： | BF1100R |
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; I
D
= 10 mA; unless otherwise specified.
SYMBOL
y
fs
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
pulsed; T
j
= 25
°
C
V
DS
= 9 V
V
DS
= 12 V
f = 1 MHz
V
DS
= 9 V
V
DS
= 12 V
f = 1 MHz
V
DS
= 9 V
V
DS
= 12 V
f = 1 MHz
V
DS
= 9 V
V
DS
= 12 V
f = 1 MHz
V
DS
= 9 V
V
DS
= 12 V
f = 800 MHz; G
S
= G
Sopt
; B
S
= B
Sopt
V
DS
= 9 V
V
DS
= 12 V
24
24
28
28
33
33
mS
mS
C
ig1-s
input capacitance at gate 1
2.2
2.2
2.6
2.6
pF
pF
C
ig2-s
input capacitance at gate 2
1.6
1.4
pF
pF
C
os
drain-source capacitance
1.4
1.1
1.8
1.5
pF
pF
C
rs
reverse transfer capacitance
25
25
35
35
fF
fF
F
noise figure
2
2
2.8
2.8
dB
dB
Fig.5
Gain reduction as a function of the AGC
voltage; typical values.
f = 50 MHz.
T
j
= 25
°
C.
handbook, halfpage
reduction
(dB)
10
20
30
40
50
0
1
2
3
4
AGC
MLD157
(1) R
G
= 250 k
to V
GG
= 12 V
(2) R
G
= 180 k
to V
GG
= 9 V
f
w
= 50 MHz; f
unw
= 60 MHz; T
amb
= 25
°
C.
Fig.6
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
handbook, halfpage
Vunw
(dB
μ
V)
80
90
100
110
0
(1)
(2)
10
20
30
40
50
gain reduction (dB)
MLD158
Rev. 02 - 13 November 2007
5 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
| BF1101WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100R,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100R,235 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 14V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100RT/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R |
| BF1100T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF1100WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FET |
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