参数资料
型号: BF1100R
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: N-channel dual-gate MOSFET
封装: BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47
文件页数: 15/15页
文件大小: 311K
代理商: BF1100R
NXP Semiconductors
BF1100; BF1100R
Dual-gate MOS-FETs
NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 November 2007
Document identifier: BF1100_N_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID
BF1100_N_2
Modifications:
BF1100_1
Release date
20071113
Fig. 1 and 2 on page 2; Figure note changed
19950425
Product specification
Data sheet status
Product data sheet
Change notice
-
Supersedes
BF1100_1
-
-
相关PDF资料
PDF描述
BF1101 N-channel dual-gate MOSFET
BF1101 N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
相关代理商/技术参数
参数描述
BF1100R,215 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1100R,235 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 14V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1100RT/R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R
BF1100T/R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143
BF1100WR 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FET