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参数资料
| 型号： | BF1100R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF1100R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47 |
| 文件页数： | 7/15页 |
| 文件大小： | 311K |
| 代理商： | BF1100R |
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
Fig.11 Drain current as a function of gate 1 current;
typical values.
V
DS
= 9 to 12 V.
V
G2-S
= 4 V.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
20
40
80
60
12
4
0
8
MLD163
IG1
μ
A)
Fig.12 Drain current as a function of gate 1 supply
voltage (= V
GG
) and drain supply voltage;
typical values; see Fig.27.
V
G2-S
= 4 V.
R
G1
connected to V
GG
.
T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
15
10
5
0
4
8
16
MLD164
12
VGG
DS
RG1
147 k
180 k
205 k
249 k
301 k
402 k
511 k
Fig.13 Drain current as a function of gate 1 voltage
(= V
GG
); typical values; see Fig.27.
V
DS
= 9 V; V
G2-S
= 4 V.
R
G1
= 180 k
(
connected to V
GG
); T
j
= 25
°
C.
handbook, halfpage
0
2
4
10
8
6
4
0
8
MLD165
VGG
ID
(mA)
V
DS
= 12 V; V
G2-S
= 4 V.
R
G1
= 250 k
(connected to V
GG
); T
j
= 25
°
C.
Fig.14 Drain current as a function of gate 1 voltage;
(= V
GG
); typical values; see Fig.27.
handbook, halfpage
0
4
8
12
4
0
8
MLD166
VGG
ID
(mA)
Rev. 02 - 13 November 2007
7 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
| BF1101WR | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100R,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100R,235 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 14V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100RT/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R |
| BF1100T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF1100WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FET |
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