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| 型号： | BF1101 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1101<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,; |
| 文件页数： | 4/15页 |
| 文件大小： | 373K |
| 代理商： | BF1101 |
1999 May 14
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
R
G1
connects G
1
to V
GG
= 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 12 mA; unless otherwise specified.
Note
1.
Measured in test circuit of Fig.21.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
16
16
1.5
1.5
1.0
1.2
16
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
(F)S-G1
forward source-gate 1 voltage
V
(F)S-G2
forward source-gate 2 voltage
V
G1-S (th)
gate 1-source threshold voltage
V
G2-S (th)
gate 2-source threshold voltage
I
DSX
drain-source current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
G2-S
= V
DS
= 0; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 100
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS
= 5 V; R
G1
= 120 k
;
note 1
V
G2-S
= V
DS
= 0; V
G1-S
= 5 V
V
G1-S
= V
DS
= 0; V
G2-S
= 4 V
7
7
7
0.5
0.5
0.3
0.3
8
V
V
V
V
V
V
V
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
20
nA
nA
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
X
mod
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
25
85
30
2.2
1.6
1.2
25
1.7
40
2.7
35
2.5
mS
pF
pF
pF
fF
dB
dB
V
f = 800 MHz; Y
S
= Y
S opt
input level for k = 1% at 0 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 1
input level for k = 1% at 40 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 1
100
dB
V
相关PDF资料 |
PDF描述 |
|---|---|
| BF1101 | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
| BF1101WR | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
| BF1101WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1101,215 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1101R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101R,215 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1101WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101WR,115 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 7V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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