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参数资料
| 型号： | BF1208 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 10/23页 |
| 文件大小： | 286K |
| 代理商： | BF1208 |
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
10 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
8.1.2
Scattering parameters for amplifier A
Table 9.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values.
f
(MHz)
Magnitude
(ratio)
(deg)
(ratio)
(deg)
50
0.991
3.86
3.08
175.91 0.0009
100
0.990
7.73
3.03
171.76 0.0019
200
0.986
15.43 2.99
163.68 0.0037
300
0.980
22.98 2.94
155.54 0.0054
400
0.970
30.44 2.89
147.55 0.0070
500
0.960
37.60 2.82
139.76 0.0085
600
0.948
44.62 2.75
132.16 0.0098
700
0.935
51.44 2.67
124.70 0.0110
800
0.921
58.04 2.58
117.39
900
0.908
64.41 2.50
110.20
1000
0.894
70.49 2.40
103.31 0.0135
8.1.3
Noise data for amplifier A
Table 10.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
opt
ratio
400
1.3
0.718
800
1.4
0.677
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V; I
D(A)
= 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
001aac569
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
Scattering parameters for amplifier A
s
11
s
21
Magnitude
s
12
Magnitude
(ratio)
s
22
Magnitude
(ratio)
0.992
0.991
0.990
0.989
0.986
0.983
0.980
0.977
0.973
0.970
0.967
Angle
Angle
Angle
(deg)
77.41
78.10
78.39
73.53
68.74
63.64
59.62
55.09
50.79
46.62
42.78
Angle
(deg)
1.41
2.81
5.57
8.34
11.08
13.78
16.45
19.10
21.69
24.28
26.87
0.0120
0.0128
Noise data for amplifier A
r
n
(
)
(deg)
16.06
37.59
0.683
0.681
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| BF1208 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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| BF-1208-03SV07-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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