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参数资料
| 型号： | BF1208 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 17/23页 |
| 文件大小： | 286K |
| 代理商： | BF1208 |
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
17 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
8.2.2
Scattering parameters for amplifier B
Table 12.
V
DS(B)
= 5 V; V
G2-S
= 4 V; I
D(B)
= 13 mA; V
DS(A)
= 0 V; V
G1-S(A)
= 0 V; T
amb
= 25
C; typical values.
f
(MHz)
Magnitude
(ratio)
(deg)
(ratio)
(deg)
50
0.985
3.42
3.33
176.41 0.0010
100
0.984
6.96
3.31
172.70 0.0020
200
0.980
13.51 3.27
165.59 0.0039
300
0.975
20.07 3.23
158.42 0.0054
400
0.969
26.61 3.19
151.34 0.0068
500
0.961
32.89 3.14
144.33 0.0085
600
0.955
39.19 3.07
137.54 0.0100
700
0.945
45.39 3.00
130.72 0.0115
800
0.938
51.39 2.93
123.98 0.0131
900
0.930
57.36 2.85
117.31
1000
0.920
63.10 2.77
110.39
8.2.3
Noise data for amplifier B
Table 13.
V
DS(B)
= 5 V; V
G2-S
= 4 V; I
D(B)
= 13 mA; V
DS(A)
= 0 V; V
G1-S(A)
= 0 V; T
amb
= 25
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
opt
ratio
400
1.3
0.695
800
1.4
0.674
Scattering parameters for amplifier B
s
11
s
21
Magnitude
s
12
Magnitude
(ratio)
s
22
Magnitude
(ratio)
0.988
0.988
0.987
0.986
0.984
0.982
0.980
0.977
0.974
0.971
0.967
Angle
Angle
Angle
(deg)
87.55
83.45
82.84
82.01
79.73
77.91
76.31
73.76
71.58
69.18
67.54
Angle
(deg)
1.60
3.16
6.31
9.40
12.46
15.57
18.62
21.70
24.76
27.81
30.86
0.0145
0.0157
Noise data for amplifier B
r
n
(
)
(deg)
13.11
32.77
0.694
0.674
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相关代理商/技术参数 |
参数描述 |
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| BF1208 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1208-03SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV07-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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