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| 型号： | BF1210 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 2/21页 |
| 文件大小： | 252K |
| 代理商： | BF1210 |
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
2 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
1.4 Quick reference data
[1]
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
[2]
2.
Pinning information
3.
Ordering information
Table 1.
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
P
tot
total power dissipation
|
y
fs
|
forward transfer admittance
Quick reference data
Conditions
Min
-
-
Typ
-
-
-
31
33
Max Unit
6
30
180
41
43
V
mA
mW
mS
mS
DC
T
sp
≤
107
°
C
amplifier A; I
D
= 19 mA
amplifier B; I
D
= 13 mA
f = 100 MHz
amplifier A
amplifier B
f = 100 MHz
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
[1]
-
26
28
C
iss(G1)
input capacitance at gate1
[2]
-
-
2.2
1.9
20
0.9
1.2
2.7
2.4
-
1.5
1.9
pF
pF
fF
dB
dB
C
rss
NF
reverse transfer capacitance
noise figure
[2]
-
-
-
Xmod
cross modulation
100
100
-
105
103
-
-
-
150
dB
μ
V
dB
μ
V
°
C
T
j
junction temperature
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline
Symbol
1
3
2
4
5
6
sym119
AMP A
DA
S
DB
G1A
G2
G1B
AMP B
Table 3.
Type number
Ordering information
Package
Name
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
BF1210
相关PDF资料 |
PDF描述 |
|---|---|
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1210 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1210,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1210-05SV | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06 | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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