参数资料
型号: BF1210
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件页数: 5/21页
文件大小: 252K
代理商: BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
5 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
[1]
Calculated from S-parameters.
[2]
Measured in
Figure 32
test circuit.
G
tr
transducer power gain
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1]
31
27
22
-
-
-
35
31
26
3
0.9
1.2
39
35
30
-
1.5
1.9
dB
dB
dB
dB
dB
dB
NF
noise figure
Xmod
cross modulation
[2]
90
-
-
100
-
90
99
105
-
-
-
-
dB
μ
V
dB
μ
V
dB
μ
V
dB
μ
V
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS(A)
= 5 V; I
D(A)
= 19 mA.
Symbol Parameter
Dynamic characteristics for amplifier A
…continued
Conditions
Min
Typ
Max
Unit
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