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参数资料
| 型号： | BF1211R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1211R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件页数： | 9/16页 |
| 文件大小： | 415K |
| 代理商： | BF1211R |
2003 Dec 16
9
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
2
10
1
10
1
MDB841
10
10
2
10
3
yis
(mS)
f (MHz)
gis
bis
Fig.17 Input admittance as a function of frequency;
typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
MDB842
10
10
2
10
3
3
10
2
10
1
|
yrs
|
(
μ
S)
f (MHz)
10
3
10
2
10
1
rs
(deg)
|
yrs
|
rs
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
2
10
1
MDB843
10
f (MHz)
10
2
10
3
|
yfs
|
(mS)
10
2
10
1
fs
(deg)
|
yfs
|
fs
Fig.19 Forward transfer admittance and phase as
functions of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
handbook, halfpage
MDB844
10
10
2
10
3
1
10
1
10
2
yos
(mS)
f (MHz)
bos
gos
Fig.20 Output admittance as a function of
frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 15 mA; T
amb
= 25
C.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1211WR | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1211R,215 | 功能描述:射频MOSFET电源晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BF1211WR | 功能描述:MOSFET TAPE-7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BF1211WR,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1211WR,135 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF1212 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
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