参数资料
型号: BF256AG
厂商: ON Semiconductor
文件页数: 3/4页
文件大小: 37K
描述: TRANS JFET RF SS N-CH 30V TO-92
产品变化通告: Product Discontinuation 02/Jan/2007
标准包装: 1,000
晶体管类型: N 通道 JFET
频率: 800MHz
增益: 11dB
额定电流: 7mA
电压 - 额定: 30V
封装/外壳: TO-226-3、TO-92-3 标准主体
供应商设备封装: TO-92-3
包装: 散装
BF256A
http://onsemi.com
3
f, FREQUENCY (MHz)
Figure 4. Input Admittance versus Frequency
g
is
, INPUT CONDUCTANCE (mmhos)
1000
0.01
10
100
10
0.1
1
Figure 5. Forward Transfer Admittance versus
Frequency
VDS
= 15 Vdc
VGS
= 0
Yis
= g
is
+ j
bis
0.1
1
10
100
bis
±gis
b
is
, INPUT SUSCEPTANCE (mmhos)
f, FREQUENCY (MHz)
g
fs
, FORWARD TRANSCONDUCTANCE (mmhos)
1000
0.1
100
100
10
1
10
VDS
= 15 Vdc
VGS
= 0
Yfs
= g
fs
± j
bfs
0.1
1
10
100
±bfs
gfs
±b
fs
, FORWARD SUSCEPTANCE (mmhos)
±VGS, GATE±SOURCE VOLTAGE (VOLTS)
C
iss
, INPUT CAPACITANCE (pF)
14 1023 5 7896
0
VDS
= 20 Vdc
f = 1 MHz
0
5
2
4
1
3
0
±VGS, GATE±SOURCE VOLTAGE (VOLTS)
C
rss
, REVERSE TRANSFER
CAPACITANCE (pF)
2846 10
0
1.0
0.5
f, FREQUENCY (MHz)
Figure 6. Reverse Transfer Admittance
versus Frequency
±g
rs
, REVERSE TRANSCONDUCTANCE (mmhos)
1000
0.001
1
100
10
0.01
0.1
Figure 7. Output Admittance versus
Frequency
VDS
= 15 Vdc
VGS
= 0
Yrs
= ±g
rs
± j
brs
0.01
0.1
1
10
±brs
±grs
±b
rs
, REVERSE SUSCEPTANCE (mmhos)
f, FREQUENCY (MHz)
g
os
, OUTPUT CONDUCTANCE (mmhos)
1000
0.001
1
100
10
0.01
0.1
VDS
= 15 Vdc
VGS
= 0
Yos
= g
os
+ j
bos
0.01
0.1
1
10
bos
gos
b
os
, OUTPUT SUSCEPTANCE (mmhos)
Figure 8. Input Capacitance versus
Gate±Source Voltage
Figure 9. Reverse Transfer Capacitance
versus Gate±Source Voltage
VDS
= 20 Vdc
f = 1 MHz
相关PDF资料
PDF描述
BF256C_J35Z IC AMP RF N-CH 30V 10MA TO-92
BLC6G22LS-75,112 FET RF LDMOS 28V 690MA SOT896B
BXA-12379 INVERTER 12V TRIPLE OUTPUT CCFL
BXA-12529/PS1 INVERTER POTTED 850V CCFL LAMP
BXA-12529 INVERTER 1000V FOR CCFL UV LAMP
相关代理商/技术参数
参数描述
BF256B 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel